InGaAs APD Modules

Ụdị: GD6510Y/ GD6511Y/ GD6512Y

Nkọwa dị mkpirikpi:

Ọ bụ indium gallium arsenide avalanche photodiode modul nwere pre-amplification sekit nke na-eme ka mgbaàmà na-adịghị ike dị ugbu a gbasaa ma gbanwee n'ime mgbama voltaji iji nweta usoro ntụgharị nke photon-photoelectric-signal amplification.

nweta nkwuputa Budata

Nka nka

Mkpado ngwaahịa

Atụmatụ

Mgbawa dị larịị agbanyere n'ihu
Nzaghachi ọsọ ọsọ
Mmetụta dị elu nke ihe nchọpụta

Ngwa

Laser nso nso
Nkwukọrịta laser
Ịdọ aka ná ntị laser

Oke fotoelectric(@Ta=22±3℃)

Ihe #	Ụdị ngwugwu	Dayameta nke elu photosensitive (mm)	Ogologo nzaghachi spektral (nm)	Voltaji ndakpọ (V)	Nzaghachi M=10 λ=1550nm (kV/W)	Oge na-ebili (ns)	Bandwit (MHz)	Ọnụego okpomọkụ T_a= -40℃ ~ 85℃ (V/℃)	Ike nha ụda (pW/√Hz)	Concentricity (μm)	Ụdị dochie anya na obodo ndị ọzọ
GD6510Y	TO-8	0.2	1000 ~ 1700	30 ~ 70	340	5	70	0.12	0.15	≤50	C3059-1550-R2A
GD6511Y		0.5				10	35		0.21		-
GD6512Y		0.08				2.3	150		0.11		C3059-1550-R08B